2026
FAB Gain Cell Memory: A Folded Asymmetric Boosted Design To Improve Sense Margin For A Refresh-Free Operation
J. Sonawane, S. Deng, K. Lee, F. G. Waqar, C. Zhang, O. Phadke, S. Datta, and S. Yu.
IEEE Symposium on VLSI Technology and Circuits (VLSI), Hawaii, USA, 2026.
First Demonstration Of Bit-Cost-Scalable And BEOL-Compatible Monolithic 4-Tier FeRAM Operating At 125 °C
E. Sarkar, J. Sonawane, H. Park, E. Quezada, K. Lee, D. Chakraborty, J. Shin, F. G. Waqar, C. Zhang,
H. J. Lee, M. Tian, S. Trolier McKinstry, V. Narayanan, A. I. Khan, S. Yu, and S. Datta.
IEEE Symposium on VLSI Technology and Circuits (VLSI), Hawaii, USA, 2026.
Co-first author
Workload-Derived AC Bias Temperature Instability And Mechanism Contributions In BEOL Oxide Channel DRAM Access Transistors
H. J. Lee, F. G. Waqar, H. Park, C. Zhang, J. Shin, E. Sarkar, H. Kim, C. Im, M. J. Hong, D. Ha,
A. I. Khan, S. Yu, and S. Datta.
IEEE Symposium on VLSI Technology and Circuits (VLSI), Hawaii, USA, 2026.
First author
Enabling Context-Switchable Monolithic 3D FPGA Design Using Bistable Ferroelectric Inverters
F. G. Waqar, M. Chen, Z. He, Z. Wan, M. Shon, W.-H. Huang, J. Cong, and S. Yu.
IEEE International Symposium on Field-Programmable Custom Computing Machines (FCCM), Atlanta, GA, 2026.
Presentation only
Non-Volatile FPGAs And CIM Enabled By Dual-FeFET Memory In 28 nm Foundry Process
M. Chen, F. G. Waqar, J. Jia, V. Garg, and S. Yu.
MADCAP Workshop at IEEE FCCM, Atlanta, GA, 2026.
Radiation Reliability Of BEOL-Compatible Ga-Doped Indium Oxide MOSFETs For eDRAM Applications
S. G. Kirtania, C. Zhang, S. E. Wodzro, F. G. Waqar, H. J. Lee, D. Chakraborty, J. D. Yeager,
D. E. Wolfe, A. I. Khan, S. Yu, and S. Datta.
IEEE International Reliability Physics Symposium (IRPS), Tucson, AZ, 2026.
Omelet: A Packaging-Aware Hierarchical Interconnect Simulator For 2.5D/3D Chiplet Architectures
J. Kim, D. Baig, F. G. Waqar, A. Victor, S. Yu, M. S. Bakir, and C. Hao.
ACM/IEEE International Symposium on Computer Architecture (ISCA), Raleigh, NC, 2026.
2025
Co-first author
Demonstration Of 3T0C Gain Cells With Self-Aligned Oxide Transistors For Parasitic-Aware Design At Array-Level
S. Deng, J. Sonawane, F. G. Waqar, O. Phadke, C. Zhang, M.-Y. Lee, S. Yu, and S. Datta.
IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, 2025.
First author
Best presentation
CMOS+X: Stacking Persistent Embedded Memories Based On Oxide Transistors Upon GPGPU Platforms
F. G. Waqar, M.-Y. Lee, S. Yoon, S. Lim, and S. Yu.
ACM/IEEE International Symposium on Memory Systems (MEMSYS), Washington DC, 2025.
First author
Monolithic 3D FPGA Design And Synthesis With Back-End-Of-Line Configuration Memories
F. G. Waqar, J. Zhang, A. Lu, Z. He, J. Cong, and S. Yu.
ACM/IEEE Design Automation Conference (DAC), San Francisco, CA, 2025.
Digital Compute-In-Memory Ising Annealer With Ferroelectric Capacitor-Based nvSRAM For Combinatorial Optimization Problems
Y. Kong, J. Jia, A. Lu, F. G. Waqar, Y.-C. Luo, H. Li, I. Young, and S. Yu.
IEEE International Symposium on Circuits and Systems (ISCAS), London, UK, 2025.
Presentation only
Digital Compute-In-Memory Ising Annealer With Ferroelectric Capacitor-Based nvSRAM For Travelling Salesman Problem
Y. Kong, J. Jia, A. Lu, F. G. Waqar, Y.-C. Luo, H. Li, I. Young, and S. Yu.
International Workshop on Ising Machines (IISM), Chicago, IL, 2025.
Hardware Acceleration Of Kolmogorov-Arnold Network (KAN) For Lightweight Edge Inference
W.-H. Huang, J. Jia, Y. Kong, F. Waqar, T.-H. Wen, M.-F. Chang, and S. Yu.
ACM/IEEE Asia and South Pacific Design Automation Conference (ASP-DAC), Tokyo, Japan, 2025.
Radiation-Resilient Amorphous Indium Oxide FeFETs For Embedded Nonvolatile Memory
S. G. Kirtania, F. G. Waqar, D. Chakraborty, J. Shin, E. Sarkar, J. Reiss, D. E. Wolfe, S. Yu, and S. Datta.
IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, 2025.
Presentation only
Experimental Demonstration Of Gain Cells With Self-Aligned Oxide Transistors For Reduced Capacitive Coupling
J. Sonawane, S. Deng, F. G. Waqar, O. Phadke, C. Zhang, M.-Y. Lee, S. Datta, and S. Yu.
IEEE Non-Volatile Memory Technology Symposium (NVMTS), Atlanta, GA, 2025.
2024
First Demonstration Of W-Doped In2O3 Gate-All-Around (GAA) Nanosheet FET With Improved Performance And Record Threshold Voltage Stability
E. Sarkar, C. Zhang, D. Chakraborty, F. Waqar, S. Kirtania, K. A. Aabrar, H. Park, J. Shin, M. Tian,
A. I. Khan, S. Yu, and S. Datta.
IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, 2024.
Amorphous Indium Oxide Channel FeFETs With Write Voltage Of 0.9 V And Endurance > 1012 For Refresh-Free 1T-1FeFET Embedded Memory
S. G. Kirtania, O. Phadke, E. Sarker, K. A. Aabrar, D. Chakraborty, F. Waqar, S. Jaewon, T. Pantha,
S. Dutta, A. I. Khan, S. Yu, and S. Datta.
IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, 2024.
2023
Presentation only
A Tutorial On The Bayesian Approach To Inverse Problems (Eg, In Heat Transfer)
F. Waqar, S. Patel, and C. Simon.
AIChE Annual Meeting, 2023.
2020
Towards Explainable Message Passing Networks For Predicting Carbon Dioxide Adsorption In Metal-Organic Frameworks
A. Raza, F. Waqar, A. Sturluson, C. Simon, and X. Fern.
ML4Molecules Workshop at NeurIPS, 2020. arXiv:2012.03723.